| Table of Contents | ECSS | Model Page |
| Background Information | Background Information | |
| Library of devices | ||
A list of silicon and gallium-arsenide devices is available in SPENVIS. The device data are retrieved from the literature and cannot be changed by the user. Upon request the list can be extended.
| Name | Dimensions(XxYxZ)µm | Heavy ion cross section method | Proton induced cross section method | Reference |
| 93L422 (BIPOLAR) | 51x51x2 | Weibull | Bendel | Petersen (1998) |
| 93L422AM (BIPOLAR) | 38.7298x38.7298x2 | Weibull | Bendel | Petersen (1998) |
| 2164 (MOS) | 13x13x2 | Weibull | Bendel | Petersen (1998) |
| D424100V (4M DRAM) | 5.96x5.96x1 | Weibull | Bendel | Petersen (1998) |
| HYB51410 (4M DRAM) | 7.07x7.07x1 | Weibull | Bendel | Petersen (1998) |
| MB814100 (4M DRAM) | 8.73x8.73x1 | Weibull | Bendel | Petersen (1998) |
| SMJ44100 (4M DRAM) | 6.9x6.9x1 | Weibull | Bendel | Petersen (1998) |
| TC514100 (4M DRAM) | 7.08x7.08x1 | Weibull | Bendel | Petersen (1998) |
| MT4C1004 (4M DRAM) | 5.57x5.57x1 | Weibull | Bendel | Petersen (1998) |
| KM41C4000 (4M DRAM) | 5.57x5.57x1 | Weibull | Bendel | Petersen (1998) |
| SAMSUNG 16M (3.3 V DRAM) | 3.14x3.14x0.1 | Weibull | Bendel | Petersen (1998) |
| HITACHI 16M (3.3 V DRAM) | 1.5x1.5x0.64 | Weibull | Bendel | Petersen (1998) |
| MICRON 16M (3.3 V DRAM) | 1.38x1.38x0.81 | Weibull | Bendel | Petersen (1998) |
| IBM E 16M (3.3 V DRAM) | 0.51x0.51x0.22 | Weibull | Bendel | Petersen (1998) |
| LUNA-C (IBM 16M DRAM) | 0.94x0.94x1 | Weibull | Bendel | Petersen (1998) |
| 01G9274 (IBM 4M DRAM) | 1.52x1.52x1 | Weibull | Bendel | Petersen (1998) |
| IBM 16M (4M DRAM) | 0.88x0.88x1 | Weibull | Bendel | Petersen (1998) |
| Name | Dimensions(XxYxZ)µm | Heavy ion cross section method | Proton induced cross section method | Reference |
| 1K MESFET SRAM | 20.0x20.0x2.0 | critical charge | experimental data (linear int.) | Weatherford et al.(1991) |
| 14 BIT COUNTER | 88.6x88.6x1.0 | experimental data | experimental data (linear int.) | Hash et al.(1994) |
Calvel, P., Barillot, C., Lamothe, P.,: An Empirical Model for Predicting Proton Induced Upset, IEEE Trans. On Nucl. Science, Vol. 43, No. 6, 1996.
Hash, G.L. , Schwank, G.R., et al., Proton irradiation effects on advanced digital and microwave III-V components.
Petersen, E.L., The SEU figure of merit and proton upset rate calculations, Nuclear Science, IEEE Transactions On Nucl. Science Vol. 45, Issue 6, Dec 1998 Page(s): 2550 – 2562
Weatherford, T.R., Petersen, E., Abdel-Kader, W.G., McNulty, P.J., Tran, L., Langworthy, J.B. and Stapor, W.J., Proton and Heavy Ion Upsets in GaAs MESFET Devices, IEEE Trans. On Nucl. Science NS-38, 1450 - 1456 (1991).
Last update: Mon, 12 Mar 2018