Table 4‑3: Summary of radiation effects and cross-references to other chapters
(Part 2 of 2)

Sub-system or component	Technology	Effect	ECSS-E-ST-10-12 main clause Cross-reference	ECSS-E-HB-10-12 Cross-reference
Optoelectronics and sensors (2)	g-ray or X-ray scintillator	TNID (alkali halides) Enhanced background	8 10.4.2, 10.4.3, 10.4.4	7.4.11 9.5
	g-ray semiconductor^b	TNID Enhanced background	8 10.4.2, 10.4.3, 10.4.4	7.4.10 9.5
	charged particle detectors	TNID (scintillator^c & semiconductor) Enhanced background TID (scintillator^c & semiconductors)	8 10.4.2, 10.4.3 7	9.5 9.3 6
	microchannel plates	Enhanced background	10.4.6	9.6
	photomultiplier tubes	Enhanced background	10.4.6	9.6
	Other imaging sensors (e.g. InSb, InGaAs, HgCdTe, GaAs and GaAlAs)	TNID Enhanced background	8 10.4.2, 10.4.3	7 9.3
	Gravity wave sensors	Enhanced background	10.4.7	9.7
Solar cells	Cover glass & bonding materials	TID	7	6
	Cell	TNID	8	7.4.9
Non-optical materials	Crystal oscillators	TID	7	6
	polymers	TID (radiolysis)	7	6
Optical materials	silica glasses	TID	7	6
	alkali halides	TID TNID	7 8	6 7.4.11
Radiobiological effects		Early effects	11	10.3.3, 10.4.4
		Stochastic effects	11	10.3.4, 10.4.4
		Deterministic late effects	11	10.3.4, 10.4.4
^a MEMS refers to the effects on the microelectromechanical structure only. Any surrounding microelectronics are also subject to other radiation effects identified in “Integrated circuits” row ^b See Table 8‑1, “Radiation Detectors” for examples of semiconductor materials that are susceptible to g-rays. ^C The effect on scintillators refers primarily to the detector material registering the radiation. The electronics needed for readout can need additional radiation assessment.