Table 8‑1: Summary of displacement damage effects observed in components as a function of component technology

Technology category	Sub-category	Effects
General bipolar	BJT Integrated circuits	hFE degradation in BJTs, particularly for low-current conditions (PNP devices more sensitive to DD than NPN)
	diodes	Increased leakage current increased forward voltage drop
Electro-optic sensors	CCDs	CTE degradation Increased dark current Increased hot spots Increased bright columns Random telegraph signals
	APS	Increased dark current Increased hot spots Random telegraph signals Reduced responsivity
	Photo diodes	Reduced photocurrents Increased dark currents
	Photo transistors	hFE degradation Reduced responsivity Increased dark currents
Light-emitting diodes	LEDs (general)	Reduced light power output
	Laser diodes	Reduced light power output Increased threshold current
Opto-couplers		Reduced current transfer ratio
Solar cells	Silicon GaAs, InP, etc.	Reduced short-circuit current Reduced open-circuit voltage Reduced maximum power
Optical materials	Alkali halides Silica	Reduced transmission
Radiation detectors	Semiconductor g-ray & X-ray detectors: Si, HPGe, CdTe, CZT	Reduced charge collection efficiency (calibration shifts, reduced resolution) Poorer timing characteristics HPGe show complex variation with temperature
	Semiconductor charged-particle detectors	Reduced charge collection efficiency (calibration shifts, reduced resolution)