Table 8‑2: Definition of displacement damage effects
Parameter |
Phenomenology and observation |
Technologies affected |
Charge-transfer efficiency (CTE) |
Creation of traps in active volume of CCD – reduced charge collection from each pixel, also streaking observed due to the delayed release of trapped charge. |
CCD |
Dark current |
Excess charge from electro-optic sensor due to charge collection from radiation-induced defects. |
CCD APS photo-diodes photo-transistors |
Hot spots |
Defect-induced charge generation in specific pixels which become brighter than the average dark current. These are usually defined in the context of the application and identified by the image-processing software as “bad pixels”. Very bright spots can result from field-enhanced emission mechanisms. |
CCD APS |
Random telegraph signals (RTS) |
Two or more multi-level dark-current states with random switching between the dark current states from seconds (for imager at room temperature) to hours (if operated at reduced temperatures) |
CCD APS |
Bright columns |
Defect-induced dark current can saturate a pixel with a time-constant comparable to or longer than device read-out times. Information from one or more pixels after the damaged pixel are thus rendered unreadable. |
CCD |
Reduced photo-current / Pixel responsivity |
Reduced charge collection as a result of decreased minority carrier life-times |
APS photo-diodes photo-transistors |
Threshold current |
|
|
Light output |
Increase in charge traps result in greater non-radiative recombination of electron-hole pairs and hence reduced radiation power efficiency |
LED laser diodes |
hFE |
Reduced minority carrier life-times in BJT base result in lower currents between the collector and emitter, and hence reduced transistor gain. |
BJT |
Open-circuit voltage |
The open circuit voltage is reduced by introduction of recombination centres in the depletion region which increase the dark current. |
Solar cell |
Short-circuit current |
Recombination centres reduce minority carrier life-time in the neutral regions of the device resulting in reduced quantum efficiency (i.e. reduced charge collection). |
Solar cell |
Power output |
See open circuit voltage and short circuit current. |
Solar cell |
Energy calibration Detector resolution |
Reduced charge collection efficiency (CCE) results in less signal from detector per unit energy deposition, and greater statistical errors in the signal (hence reduced resolution). For cryogenic detectors, these parameters show complex behaviour with changes in temperature. |
Semiconductor radiation detectors |