|
|
|
|
|
Total ionising dose (TID)
|
Ionising dose in material
|
grays (material) (Gy(material)) or
rad(material)
1 Gy = 100 rad
|
Threshold voltage shift and leakage
currents in CMOS, linear bipolar (note dose-rate sensitivity)
|
Electrons, protons, bremsstrahlung
|
Displacement damage
|
Displacement damage equivalent dose
(total non-ionising dose)
Equivalent fluence of 10 MeV protons
or 1 MeV electrons
|
MeV/g
cm-2
|
All photonics, e.g. CCD transfer
efficiency, optocoupler transfer ratio
Reduction in solar cell efficiency
|
Protons, electrons, neutrons, ions
|
Single event effects
from direct ionisation
|
Events per unit fluence from linear
energy transfer (LET) spectra & cross-section versus LET
|
cm2 versus MeV×cm2/mg
|
Memories, microprocessors. Soft
errors, latch-up, burn-out, gate rupture, transients in op-amps, comparators.
|
Ions Z>1
|
Single event effects from nuclear
reactions
|
Events per unit fluence from energy
spectra & cross-section versus particle energy
|
cm2 versus MeV
|
As above
|
Protons, neutrons,
ions
|
Payload-specific radiation effects
|
Energy-loss spectra,
charge-deposition spectra
charging
|
counts s-1 MeV-1
|
False count rates in detectors,
false images in CCDs
Gravity proof-masses
|
Protons, electrons, neutrons, ions,
induced radioactivity (α, b±, g)
|
Biological damage
|
Dose equivalent = Dose(tissue) x
Quality Factor;
equivalent dose = Dose(tissue) x
radiation weighting factor;
Effective dose
|
sieverts (Sv) or rems
1 Sv = 100 rem
|
DNA rupture, mutation, cell death
|
Ions,
neutrons, protons, electrons,
g-rays, X-rays
|
Charging
|
Charge
|
coulombs (C)
|
Phantom commands from ESD
|
Electrons
|